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The anomalous electrical conductance for the V 2 O 5 foam synthesized via a foaming process was measured. In the annealing process, the synthesized V 2 O 5 foam is recrystallized with the increase of annealing temperature. The recrystallization procedure was characterized by using physical analysis tools such as thermogravimetric analysis (TGA), differential scanning calorimetry (DSC), scanning electron microscopy (SEM), high‐resolution transmission electron microscopy (HRTEM), and X‐ray diffractometer. In the electrical analysis technique of current‐voltage characteristics as a function of annealing temperature, an anomalous hysteric behavior appears at the annealing temperature of 400°C. We conclude that the recrystallization of V 2 O 5 nanoplates results in the anomalous behavior in voltage‐dependent current characteristics.
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Kim et al. (2013) studied this question.
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