4×4 Surface-Emitting 1.55 µm InGaAsP/InP Laser Arrays with Microcoated Reflectors Fabricated by Reactive Ion Etching

4×4 surface-emitting 1.55 µm InGaAsP/InP laser arrays with microcoated reflectors are fabricated. These surface-emitting laser arrays can be operated in the CW condition at 20°C and driven independently. The average CW threshold current of these lasers is about 55 mA and the average maximum output power is about 4 mW at 20°C. Using this 4×4 surface-emitting laser array, simple letters can be rendered by brightened dots. The laser wafer has a buried-heterostructure (BH) fabricated by all MOCVD (Metal Organic Vapor Deposition) and dry etching. The etched vertical laser facets and the inclined reflectors are fabricated simultaneously by inclined RIE using Cl 2 gas, a TiO 2 mask, and a 50 degree stainless steel sample holder. A microcoating process for the inclined reflectors and the back laser facets that achieves high reflectivity has also been developed.