IR scattering-type near-field microscopy is applied to simultaneously map material composition and conduction properties in cross-sectional samples of industrial bipolar and metal-oxide- semiconductor devices with nanoscale spatial resolution. Within a single mid-IR image, all relevant materials such as metals, Si, Si3N4, and oxides can be identified by material-specific amplitude and phase contrasts.
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Huber et al. (2007) studied this question.
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