What question did this study set out to answer?

To develop and evaluate a self-powered, broadband photodetector utilizing a two-dimensional MoSe2/SnS2 van der Waals heterostructure.

August 16, 2026PhotonicsOpen Access

Self-Powered Broadband Photodetector Based on MoSe2/SnS2 Van der Waals Heterostructure

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Authors

DWDonglin WangShandong University of Science and Technology TFTianhao FengZhengzhou University of Light Industry ZLZiyan LiWuhan University of Technology

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Implication

Experimental study demonstrates self-powered broadband photodetection across 350–1050 nm using a MoSe2/SnS2 heterostructure, indicating potential for energy-efficient optoelectronics.

Key Points

To develop and evaluate a self-powered, broadband photodetector utilizing a two-dimensional MoSe2/SnS2 van der Waals heterostructure.
Fabricated a 2D MoSe2/SnS2 heterostructure featuring complementary optical absorption and a type-II band alignment to induce an interfacial built-in electric field.
Characterized optoelectronic performance across ultraviolet to infrared wavelengths (350–1050 nm) under zero bias and an applied reverse bias of −2 V.
Under zero external bias and 405 nm illumination, the device demonstrated self-driven operation with a responsivity of 0.6 mA/W and rise/fall response times of 5.8 ms and 6.1 ms.
Under an applied reverse bias of −2 V at 405 nm, the photodetector achieved a responsivity of 161 mA/W, a detectivity of 8.6 × 10¹⁰ Jones, a low dark current of 5 pA, and an on/off ratio of 1180.

Cite This Study

Wang et al. (2026) studied this question.

synapsesocial.com/papers/6a817a11f2fb91fc834ad98b https://doi.org/10.3390/photonics13080767

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August 16, 2026PhotonicsOpen Access

Self-Powered Broadband Photodetector Based on MoSe2/SnS2 Van der Waals Heterostructure

View Full Paper

Ask AI

Bookmark

Authors

DWDonglin WangShandong University of Science and Technology TFTianhao FengZhengzhou University of Light Industry ZLZiyan LiWuhan University of Technology

Discussion

Member takes

Implication

Experimental study demonstrates self-powered broadband photodetection across 350–1050 nm using a MoSe2/SnS2 heterostructure, indicating potential for energy-efficient optoelectronics.

Key Points

To develop and evaluate a self-powered, broadband photodetector utilizing a two-dimensional MoSe2/SnS2 van der Waals heterostructure.
Fabricated a 2D MoSe2/SnS2 heterostructure featuring complementary optical absorption and a type-II band alignment to induce an interfacial built-in electric field.
Characterized optoelectronic performance across ultraviolet to infrared wavelengths (350–1050 nm) under zero bias and an applied reverse bias of −2 V.
Under zero external bias and 405 nm illumination, the device demonstrated self-driven operation with a responsivity of 0.6 mA/W and rise/fall response times of 5.8 ms and 6.1 ms.
Under an applied reverse bias of −2 V at 405 nm, the photodetector achieved a responsivity of 161 mA/W, a detectivity of 8.6 × 10¹⁰ Jones, a low dark current of 5 pA, and an on/off ratio of 1180.

Cite This Study

Wang et al. (2026) studied this question.

synapsesocial.com/papers/6a817a11f2fb91fc834ad98b https://doi.org/10.3390/photonics13080767

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