What question did this study set out to answer?

To model how interface roughness and charge traps cause device-to-device variability in electron and hole spin qubits within silicon metal-oxide-semiconductor systems.

February 8, 2022Physical Review AppliedOpen Access

Variability of Electron and Hole Spin Qubits Due to Interface Roughness and Charge Traps

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To model how interface roughness and charge traps cause device-to-device variability in electron and hole spin qubits within silicon metal-oxide-semiconductor systems.
Simulated single-qubit operational properties, specifically Larmor and Rabi frequencies, subject to disorder at the silicon/silicon dioxide interface.
Evaluated electron spin qubits with synthetic spin-orbit coupling fields from micromagnets alongside hole spin qubits governed by intrinsic spin-orbit coupling.
Charge traps produce substantially greater device-to-device variability than interface roughness alone.
Disorder induced by interface charge traps scatters qubit Rabi frequencies across more than one order of magnitude.

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Implication

Computational modeling demonstrates that charge traps dominate spin qubit variability in silicon devices, indicating crucial material constraints for scalable quantum computing architectures.

Cite This Study

Martínez et al. (2022) studied this question.

synapsesocial.com/papers/6a817aee407ce5842fa8e26b https://doi.org/10.1103/physrevapplied.17.024022

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Implication

Computational modeling demonstrates that charge traps dominate spin qubit variability in silicon devices, indicating crucial material constraints for scalable quantum computing architectures.

Variability of Electron and Hole Spin Qubits Due to Interface Roughness and Charge Traps

Key Points

Discussion

Implication

Cite This Study

Variability of Electron and Hole Spin Qubits Due to Interface Roughness and Charge Traps

Key Points

Discussion

Implication

Cite This Study

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