The reaction of oxygen on Si(100) surfaces from 700 to 950^∘{}C has been studied in real time with about 10-{μ}s resolution, by use of pulsed molecular-beam reactive scattering. The oxygen reaction probability is roughly proportional to the normal component of the incident ve- locity of the O₂ molecule. An intermediate step between the initial adsorption of oxygen and the desorption of SiO was observed.
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Yu et al. (1987) studied this question.
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