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A nano fabricated planar point contact (PC) in NiFe film showed a magnetoresistance (MR) ratio of about 18%, and it stabilized at about 12%; with both values being much larger than those for the anisotropic MR (AMR) ratio of the film. The measurements of current-driven resistance change in the PC were also performed in which about 10.5% resistance change was observed. The saturated resistances coincided with the typical values in the MR measurements (MR: 12%). These results inspired correlation between MR and domain wall.
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Y. Ohsawa (2006) studied this question.
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