In this paper, we have investigated the effects of O 2 post-deposition annealing (PDA) on metal/Al 2 O 3 /Si 3 N 4 /SiO 2 /Si (MANOS) devices. Compared with low-energy plasma oxygen pre-treatment and the N 2 PDA process, the O 2 PDA process can lead to a significant retention improvement. The improvement is attributed to the removal of oxygen vacancies in Al 2 O 3 block oxide and the oxygen incorporation at the Si 3 N 4 /Al 2 O 3 interfacial layer which is determined by x-ray photoelectron spectroscopy (XPS) depth profiling and electrical characteristics. Metal/Al 2 O 3 /SiO 2 /Si (MAOS) devices are also studied to confirm these effects. As a result, we consider that the O 2 PDA process is a crucial process for future MANOS-type memory devices.
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Xu et al. (2012) studied this question.
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