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A ridge waveguide-type InGaAsP/InP laser diodes monolithically integrated with light deflectors (DLDs) were fabricated and light deflection was demonstrated, for the first time. The light deflection was simulated and measured in a fabricated device. The output beam deflection in a fabricated device was controlled by carrier induced refractive index change of the deflector. The maximum beam deflection angle of 3.12° was obtained at an applied current of 15 mA.
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Kim et al. (2004) studied this question.
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