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July 1, 1990Japanese Journal of Applied Physics

GaInAsP/InP Semiconductor Multilayer Reflector Grwon by Metalorganic Chemical Vapor Deposition and its Application to Surface Emitting Laser Diode

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YIY. ImajoJapan Aviation Electronics Industry (Japan)AKA. KasukawaNational Taiwan University of Science and TechnologySKS. KashiwaTohoku University

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Imajo et al. (1990) studied this question.

synapsesocial.com/papers/6a83082728b8a62be998fdb6https://doi.org/10.1143/jjap.29.l1130
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1GaAs/AlxGa1-xAs Multilayer Reflector for Surface Emitting Laser Diode1983 · 30 citations
  2. 2GaInAsP/InP surface emitting laser (λ = 1.4 μm, 77 K) with heteromultilayer Bragg reflector1985 · 36 citations
  3. 3Room temperature pulsed oscillation of GaAlAs/GaAs surface emitting junction laser1985 · 31 citations
  4. 4Chemical beam epitaxially grown InP/InGaAsP interference mirror for use near 1.55 μm wavelength1987 · 33 citations
  5. 5GaInAsP/InP Integrated Twin-Guide Lasers with First-Order Distributed Bragg Reflectors at 1.3 µm Wavelength1980 · 85 citations