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September 2, 1982Electronics Letters

Molecular-beam epitaxially grown 1.3 μm GaInAsP/InP double-heterostructure lasers

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Authors

WTW. T. TsangArup Group (United States)FRF. K. ReinhartGilead Sciences (Germany)JDJ. A. DitzenbergerAT&T (United States)

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Tsang et al. (1982) studied this question.

synapsesocial.com/papers/6a70156478a11c550e09e28ehttps://doi.org/10.1049/el:19820530
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