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Irradiation of single-crystal silicon with pulsed ruby laser radiation is shown to reduce the levels of C and O surface contaminants to within the detection limits of Auger electron spectroscopy. Similar results were observed following irradiation of Ar sputtered surfaces and surfaces with chemisorbed oxygen. These results show that pulsed laser irradiation can be used to prepare atomically clean Si surfaces in remarkably short processing times.
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Zehner et al. (1980) studied this question.
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