A single pulse of ruby laser radiation is shown to cause significant regrowth in the amorphous region of heavily ion-implanted GaAs. The implanted Te atoms and the host material both show good channeling dips, suggesting essentially complete substitutionality of the Te. There has been only a minor redistribution of the tellurium atoms. The resulting local Te concentration in the laser-irradiated sample is more than ten times the known maximum solubility of Te in GaAs.
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Golovchenko et al. (1978) studied this question.
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