A double-layered encapsulant for annealing ion-implanted GaAs up to 1100 °C

A double-layered encapsulation consisting of a 1000-Å plasma-deposited Si3N4 layer under a 3000-Å CVD SiO2 layer doped with arsenic has been used to anneal selenium ion-implanted GaAs at temperatures up to 1100 °C with no signs of mechanical failure when examined with a scanning electron microscope. Significant improvement in electrical activation of implanted layers over simple Si3N4 layer caps has also been observed at lower temperatures.