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A vacancy-buckling model is proposed for the (2×{}2) structure of the GaAs(111) surface. The model is confirmed by analysis of low-energy electron diffraction spectra. A reconstruction mechanism, basic to III-V compound surfaces, is proposed which favors equal numbers of dangling bonds on the nearest Ga and As neighbors. This model explains the (2×{}2) and (1×{}1) periodicities observed on (111) and (110) surfaces, respectively.
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Tong et al. (1984) studied this question.
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