Focused ion beam induced deposition of platinum for repair processes

Focused ion beam induced deposition of platinum from a gas of (methylcyclopentadientyl) trimethyl platinum has been demonstrated and used for integrated circuit repair. Ga+ ions in the range of 30–40 keV have been used and line widths down to 0.3 μm with resistivities as low as 70 μΩ cm have been observed. The deposition yield as a function of angle of incidence has been measured by scanning the ion beam across a 2.6 μm diameter pyrex rod. The conductors on an actual integrated circuit have been modified by milling and filling a via to connect two Al lines in a sandwiched configuration as well as by milling two vias through passivation and connecting two adjacent Al lines.