X-ray photoelectron spectroscopy study of polyimide thin films with Ar cluster ion depth profiling

X-ray photoelectron spectroscopy depth profiling of polyimide thin films on silicon substrates using an Ar cluster ion beam results in an extremely low degradation of the polyimide chemistry. In the range from 2.5 to 20 kV, a lower cluster ion energy produces a lower sputter induced damage to the polymer and results in an improved polyimide to silicon interface width. The sputtering rates of the polyimide are found to increase exponentially with an increase in the Ar cluster ion energy.