Si-SiO 2 interface traps are typically annealed at a low temperature (300-450 degrees C) in the presence of hydrogen. Despite the widespread acceptance and importance of this technique, the rates and mechanisms of trap annealing are not well understood. Several recent papers have presented kinetic descriptions of Si-SiO 2 interface trap annealing. The author investigates the application of these kinetic results to models of Si-SiO 2 interface chemical reactions. Directions for further inquiries are described.
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Michael L. Reed (1989) studied this question.
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