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July 1, 1982Journal of Vacuum Science and Technology

Measurement of semiconductor–insulator interface states by constant-capacitance deep-level transient spectroscopy

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NJN. M. JohnsonUniversity of Pennsylvania

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N. M. Johnson (1982) studied this question.

synapsesocial.com/papers/6a8ae85ba42d46e0ffcaa0ae https://doi.org/10.1116/1.571768

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