Enhancement-mode nanowire (nanobelt) field-effect-transistors with Schottky-contact source and drain electrodes

Enhancement-mode (E-mode) field-effect-transistors (FETs) have advantages in making high-speed and low power consumption devices. However, most reported nano-FETs work in the depletion-mode, because E-mode nano-FETs are usually difficult to be implemented. We suggest a device structure, based on which high-performance E-mode nanowire (NW) or nanobelt based FETs can be reliably fabricated. In this device structure, both source and drain electrodes form Schottky contact with the NW, and a top gate is long enough to control the entire conductive channel. The working principle is discussed in detail. This device structure is universal to semiconductor materials and has diverse application prospects.