Electric properties at metal/ n -type diamond interfaces are investigated. Homoepitaxial diamond thin films with n -type conduction are grown on {111} diamond substrates by microwave-enhanced plasma chemical vapor deposition. Gold, copper and aluminum, which have a low reactivity for diamond, are deposited on diamond films. Au and Cu contacts are found to give good n -type rectification properties with a small reverse current. However, a large reverse current is observed for Al contacts. This large reverse current may originate from the lowering of the Schottky barrier height at the Al/ n -type diamond interfaces.
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Teraji et al. (1999) studied this question.
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