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Current-voltage characteristics have been obtained for various metal contacts formed on boron-doped diamond epitaxial film prepared on synthesized Ib diamond by the microwave plasma-assisted chemical vapor deposition method. Ti contacts and W contacts have exhibited good ohmic and Schottky properties, respectively. For the first time, we have fabricated Schottky diodes on boron-doped diamond epitaxial films using these contacts and investigated their properties.
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Shiomi et al. (1989) studied this question.
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