Sputter Type HF Ion Source for Ion Beam Deposition Apparatus

A sputter-type HF(high-frequency) ion source was developed. The L-coupled high-frequency discharge phenomenon was combined with DC diode sputtering to enhance the plasma density. A high-density plasma of 3×10 12 ions/cm 3 was effectively generated at an HF power of 300W, since the plasma could almost be confined in the limited space of a target, an HF coil and an ion extraction aperture electrode. Then, most of the solid source materials were effectively vaporized by high-rate sputtering (400 Å/s for Cu target) in the ionization region and were simultaneously highly ionized. The excess energy and the energy spread Δ E of the extracted ion beam were 13.5 eV and 7.8 eV, respectively. The maximum ion current of the mass separated Cu + current was 530 µA without deceleration, under the conditions of an Ar sputter gas pressure of 1×10 -1 Torr (1.33×10 1 Pa), HF power of 300W, and an extraction voltage of 10 kV, respectively.