Thermal Stability of TaSi[sub x]N[sub y] Films Deposited by Reactive Sputtering on SiO[sub 2]

The thermal stability of /p-type Si metal-insulator-semiconductor structure has been evaluated by measuring equivalent oxide thickness (EOT) from capacitance-voltage curves and gate leakage current as a function of annealing temperatures. films were deposited using reactive sputtering from a target, varying the nitrogen/argon flow ratio. A reaction between and was observed after a 1000°C anneal, resulting in the increase of interfacial roughness and oxide thickness in the structures. Cross-sectional transmission electron microscopy shows no indication of an interfacial reaction or crystallization in on up to 1000°C as manifested by the negligible change in EOT and the stable leakage currents density A/cm 2 at V). The presence of Si-N bonds is attributed to cause the amorphous nature of the high N-containing films. This may retard the formation of an interface layer and improve the chemical-thermal stability of the gate electrode/dielectric interface and oxygen diffusion barrier properties under high-temperature annealing.