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April 1, 1999IEEE Electron Device Letters

Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors

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Authors

WHW.K. HensonIBM (United States)KAKhaled AhmedSouthern Illinois University CarbondaleEVEric M. VogelGeorgia Institute of Technology

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Henson et al. (1999) studied this question.

synapsesocial.com/papers/6a86b15836c36f97809ead89https://doi.org/10.1109/55.753759
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