The interaction of deposited Al 3 Ta intermetallic compound film with a silicon substrate is studied by Auger electron spectroscopy in order to examine the suitability of film for use instead of aluminum as a metallization material. Penetration of aluminum into silicon and formation of aluminum spikes are completely blocked by a thin interfacial layer consisting of Ta and Si formed at the interface between Al 3 Ta and silicon. It is revealed that Al 3 Ta film is a useful material as a high-quality metallization for silicon devices.
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Noya et al. (1988) studied this question.
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