Preparation and Characterizations of Al₃Ta Intermetallic Compound Films

The intermetallic compound film of Al 3 Ta was prepared by co-sputtering at a substrate temperature as low as 400degC. Effects of subsequent annealing in air on the grain growth and on the electrical properties were examined. It is revealed from the Auger electron spectroscopy analysis that the film surface is covered with a thin Al 2 O 3 layer which protects the film from further oxidation. The films obtained are sufficiently applicable as a metallization material for large-scale integrated circuits.