Gas-source molecular beam epitaxy growth of highly strained device quality InAsP/InP multiple quantum well structures

InAsxP1−x/InP strained multiple quantum wells with strain as high as 2.5% were grown by gas-source molecular beam epitaxy. Successful control of the arsenic composition over a wide range was achieved by two different growth techniques. Structural and optical studies, such as high-resolution x-ray rocking curve, cross-sectional transmission electron microscopy, photoluminescence, and absorption measurement, indicate that we have obtained high quality multiple quantum wells that are suitable for optoelectronic applications.