The interface and atomic layer deposition (ALD) of Al2O3 on the annealed, N2 plasma and forming gas (N2:H2) exposed Al0.25Ga0.75N surface was studied using in situ X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. Exposure of the Al0.25Ga0.75N surface to the plasma treatments is able to remove spurious carbon, and readily facilitate uniform ALD Al2O3 nucleation.
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Qin et al. (2013) studied this question.
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