Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
June 1, 2002Proceedings of the IEEE

AlGaN/GaN HEMTs-an overview of device operation and applications

View Full Paper
Ask AI
Bookmark
Share

Authors

Umesh K. Mishra
Umesh K. MishraOklahoma State UniversityPPP. ParikhRenesas Electronics (Japan)YWYifeng WuBeijing Institute of Technology

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Mishra et al. (2002) studied this question.

synapsesocial.com/papers/69d84a2f05ee2ba81dbef813https://doi.org/10.1109/jproc.2002.1021567
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors2001 · 120 citations
  2. 2Very low resistance multilayer Ohmic contact to n-GaN1996 · 460 citations
  3. 3Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer1986 · 2,208 citations
  4. 4Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures1999 · 3,018 citations
  5. 5GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high-temperature monocrystalline AlN buffer layers1995 · 250 citations