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March 1, 2001IEEE Transactions on Electron Devices

The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

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RVR. VeturyApplied System Technologies (United States)NZN.Q. ZhangUniversity of California, Santa BarbaraSKS. KellerUniversity of California, Santa Barbara

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Vetury et al. (2001) studied this question.

synapsesocial.com/papers/6a5f2cb5a182e0e07daf2adbhttps://doi.org/10.1109/16.906451
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