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October 15, 2001Applied Physics Letters

Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors

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Authors

GSG. SiminUniversity of South CarolinaAKA. KoudymovRensselaer Polytechnic InstituteATAhmad TarakjiGlasgow Royal Infirmary

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Simin et al. (2001) studied this question.

synapsesocial.com/papers/6a87f1f9d79ae02bd34de709https://doi.org/10.1063/1.1412282
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Also Consider

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  1. 1Mechanism of radio-frequency current collapse in GaN–AlGaN field-effect transistors2001 · 92 citations
  2. 2Current instabilities in GaN-based devices2001 · 153 citations
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  5. 5The influence of the strain-induced electric field on the charge distribution in GaN-AlN-GaN structure1993 · 271 citations