Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate

A high-electron-mobility transistor (HEMT) structure consisting of a 15-nm-thick quaternary AlGaInN top barrier layer, a thin 200-nm-thick unintentionally doped (UID) GaN channel layer, and an AlN back barrier was grown on a single-crystal AlN substrate by metal–organic chemical vapor deposition. The HEMTs fabricated on the grown heterostructure exhibited DC pinch-off characteristics with no large negative resistance owing to the high thermal conductivity of the AlN substrate. The 2-μm-gate-length devices showed the maximum current density of 500 mA/mm and the peak transconductance of 120 mS/mm with the threshold voltage of approximately −4 V. The off-state leakage was less than 30 μA/mm thanks to the thin UID-GaN channel with good crystal quality. The pulsed I–V characteristics for the fabricated HEMTs showed much smaller drain current decreasing compared to the same structured HEMTs with a C-doped GaN back barrier on a SiC substrate. This indicates that the UID-GaN channel grown on the AlN substrate had no harmful impurity levels that cause the current collapse phenomenon. The above-mentioned results demonstrate that the combination of the thin UID-GaN channel and the AlN back barrier works effectively in GaN HEMTs, and it will contribute to the device design and fabrication for future high-power/high-frequency applications.