Current-collapse suppression and leakage-current decrease in AlGaN/GaN HEMT by sputter-TaN gate-dielectric layer

In this paper, we explore the electrical characteristics of high-electron-mobility transistors (HEMTs) using a TaN/AlGaN/GaN metal insulating semiconductor (MIS) structure. The high-resistance tantalum nitride (TaN) film prepared by magnetron sputtering as the gate dielectric layer of the device achieved an effective reduction of electronic states at the TaN/AlGaN interface, and reducing the gate leakage current of the MIS HEMT, its performance was enhanced. The HEMT exhibited a low gate leakage current of 2.15 × 10 −7 mA/mm and a breakdown voltage of 1180 V. Furthermore, the MIS HEMT displayed exceptional operational stability during dynamic tests, with dynamic resistance remaining only 1.39 times even under 400 V stress.