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July 17, 1995Applied Physics Letters

GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high-temperature monocrystalline AlN buffer layers

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Authors

TWT. W. WeeksNorth Carolina State UniversityMBM. D. BremserNorth Carolina State UniversityKAK. S. AileyNorth Carolina State University

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Cite This Study

Weeks et al. (1995) studied this question.

synapsesocial.com/papers/6a7455c210cd5531eba7fe1bhttps://doi.org/10.1063/1.114642
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