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We demonstrate the existence of nonequilibrium between electrons and holes in the semiconductor GaAs under the influence of high electric fields. Hot-electron distributions in the presence of a cool majority hole plasma are observed. The measurement of the electron-energy-loss rate under these conditions allows the first experimental determination of the energy transfer by electron-hole Coulomb scattering in a semiconductor.
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Höpfel et al. (1986) studied this question.
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