August 15, 1981Applied Physics Letters

High-field transport of holes in silicon

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PSP.M. SmithLouisiana State University JFJeffrey FreyRutherford Appleton Laboratory PCP. ChatterjeeSinopec (China)

Abstract

The room-temperature drift velocity of holes in silicon has been measured for electric fields ranging from 9 to 234 kV/cm using a microwave time-of-flight technique. The measured velocity saturates at a value of 0.96±0.05×107 cm/sec at a field strength of 175 kV/cm.

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Smith et al. (1981) studied this question.

synapsesocial.com/papers/6a826e0ece17449fdfffbca7 https://doi.org/10.1063/1.92711

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High-field transport of holes in silicon

Abstract

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High-field transport of holes in silicon

Abstract

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Cite This Study

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