Pseudomorphic InyGa1−yAs/GaAs/AlxGa1−xAs single quantum well surface-emitting lasers with integrated 45° beam deflectors

We report on the first demonstration of pseudomorphic InGaAs single quantum well surface-emitting lasers (SELs), with etched vertical mirrors and integrated 45° beam deflectors fabricated by ion beam etching. 100-μm-wide broad-area SELs exhibited a threshold current of 320 mA, a total power of 126 mW, and a total external differential quantum efficiency of 0.09 W/A for a 500-μm-long cavity. The perpendicular far-field pattern of broad-area SELs showed a full width at half maximum of ∼20°. The lasers with various types of cavities fabricated from the same wafer were compared. Broad-area edge-emitting lasers had a threshold current of 200 mA, a total power of 700 mW, and a total external differential quantum efficiency of 0.52 W/A.