High-speed and large-window C-doped Sb-rich GeSbTe alloy for phase-change memory applications

In order to improve the phase transition properties of CGe 2 Sb 2 Te 5 (CGST) phase-change materials, we proposed and demonstrated a carbon-doped Sb-rich Ge 0.6 Sb 3 Te phase-change material [C 0.05 (Ge 0.6 Sb 3 Te) 0.95 , named Sb-rich GSTC]. The phase transition of Sb-rich GSTC can be triggered by a 10 ns electric pulse with a large resistance ratio, which is much better than that of CGST. Meanwhile, the Sb-rich GSTC film maintains good thermal stability with a crystallization temperature and data retention of 203.1 °C and 114.8 °C@10-year, respectively. The above results imply carbon-doped Sb-rich GeSbTe alloy is a promising material for phase-change memory applications with high operation speed, a large memory window, and good stability and process compatibility.