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Results of Faraday rotation measurements in the region of the absorption edge of amorphous CdGeAs 2 , at room and liquid nitrogen temperatures are presented. Comparison with the BHL and HLN formulae for the Faraday rotation of crystalline semiconductors yields room‐temperature values of the energy gap of 1.22 and 1.32 eV, respectively. The results are discussed in terms of the generally accepted model of amorphous semiconductors, and the gaps obtained are tentatively assigned to the mobility gap.
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Vorisek et al. (1971) studied this question.
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