Threading Dislocation Reduction in InP on GaAs by Thin Strained Interlayer and its Application to the Fabrication of 1.3-µm-Wavelength Laser on GaAs

This paper examines the reduction of threading dislocation by a thin strained interlayer (SIL), and a long-wavelength laser fabricated on a GaAs substrate with SILs. A cross-sectional transmission electron microscope is used to observe the dislocation blocking ability of an SIL made of InGaP, which is inserted in an InP layer grown on a GaAs substrate. The characteristics of the BH laser emitting at 1.3 µm on GaAs are investigated. Most of them are improved by SIL insertion. In particular, threshold current is reduced to 70% on average and is also distributed more uniformly.