Stable continuous room-temperature laser operation of AlxGa1−xAs-GaAs quantum well heterostructures grown on Si

Data are presented demonstrating stable room-temperature continuous (cw) photopumped laser operation of an AlxGa1−xAs-GaAs quantum well heterostructure (QWH) grown on Si by a combination of molecular beam epitaxy and metalorganic chemical vapor deposition. The cw 300 K laser operation of the single well AlxGa1−xAs-GaAs QWH occurs at an excitation threshold of 6.7×103 W/cm2 (Jeq=2.8×103 A/cm2), or a factor of 10 lower than similar multiple well QWH’s. The laser operation is stable for four (or more) hours, the length of the ‘‘test.’’