Monolithically Integrated AlGaAs/InGaAs Laser Diode, p-n Photodetector and GaAs MESFET Grown on Si Substrate

We have demonstrated the first successful fabrication of the monolithically integrated AlGaAs/InGaAs laser diode, p-n photodetector and GaAs metal semiconductor field-effect transistor (MESFET) grown on a SiO 2 back-coated p-Si substrate using selective regrowth by metalorganic chemical vapor deposition (MOCVD). The reliability of the laser diode on the Si substrate can be improved by utilization of the strain-relieved AlGaAs/InGaAs laser diode with the InGaAs intermediate layer. During the GaAs layer growth, the p-n photodetector is formed near the surface of the p-Si substrate by the diffusion of As atoms. The use of SiO 2 back-coated Si substrate is effective in suppressing unintentional Si autodoping and in obtaining a good pinch-off GaAs MESFET.