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August 1, 1986Japanese Journal of Applied Physics

A Trial Fabrication of Circular Buried Heterostructure (CBH) GaAlAs/GaAs Surface Emitting Laser by Using Selective Meltback Method

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Authors

SKSusumu KinoshitaTokyo Institute of TechnologyTOTetsufumi OdagawaFujitsu (Japan)KIKenichi IgaTokyo Institute of Technology

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Kinoshita et al. (1986) studied this question.

synapsesocial.com/papers/6a828ec19aaf5d32a4b280f8https://doi.org/10.1143/jjap.25.1264
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Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1GaInAsP/InP surface emitting injection laser with a ring electrode1984 · 24 citations
  2. 2Room-temperature pulsed oscillation of GaAlAs/GaAs surface emitting injection laser1984 · 64 citations
  3. 3Room temperature pulsed oscillation of GaAlAs/GaAs surface emitting junction laser1985 · 31 citations
  4. 4Selective Meltbacked Substrate Inner-Stripe AlGaAs/GaAs Lasers Operated under Room Temperature CW Condition1983 · 19 citations