Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
January 1, 1986Journal of Lightwave Technology

GaInAsP/InP surface-emitting lasers with current confining structure

View Full Paper
Ask AI
Bookmark
Share

Authors

SUSeiji UchiyamaLawrence Livermore National LaboratoryYOY. OhmaeTottori UniversitySSSatoshi ShimizuDaikin (United States)

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Uchiyama et al. (1986) studied this question.

synapsesocial.com/papers/6a828ec19aaf5d32a4b280fbhttps://doi.org/10.1109/jlt.1986.1074790
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1GaInAsP/InP surface emitting laser (λ = 1.4 μm, 77 K) with heteromultilayer Bragg reflector1985 · 36 citations
  2. 2GaInAsP/InP Surface Emitting Injection Laser with Buried Heterostructures1981 · 19 citations
  3. 3GaInAsP/InP surface emitting injection laser with a ring electrode1984 · 24 citations
  4. 4Two-dimensional array of GaInAsP/InP surface-emitting lasers1985 · 55 citations
  5. 5Room temperature pulsed oscillation of GaAlAs/GaAs surface emitting junction laser1985 · 31 citations