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March 28, 1985Electronics Letters

GaInAsP/InP surface emitting laser (λ = 1.4 μm, 77 K) with heteromultilayer Bragg reflector

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Authors

ACAnan ChailertvanitkulTokyo Institute of TechnologyKIKenichi IgaTokyo Institute of TechnologyKMKazunori MorikiTokyo City University

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Chailertvanitkul et al. (1985) studied this question.

synapsesocial.com/papers/6a6f2c8d2163a0a01bc38187https://doi.org/10.1049/el:19850216
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