We report on the frequency response of quantum well lasers on Si substrates grown by molecular beam epitaxy. Ridge waveguide lasers of 10 μm×380 μm having threshold currents as low as 40 mA were used in this study. Measurements were performed up to a frequency of 4.5 GHz with a resultant modulation corner frequency of 2.5 GHz when the laser was operated about 20% above the threshold.
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Chen et al. (1988) studied this question.
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