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A surface emitting AlGaAs/GaAs DH laser having one etched facet integrated with a 45° metallised reflector is demonstrated with a threshold current as low as 70 mA for a 6 μm (gain-guided) shallow mesa stripe geometry. The etched facet/45° mirror combination was fabricated by tilted ion beam milling through the p-metallisation of the processed wafer. A surface emitter with power as high as 70 mW is achieved with a 50μm stripe.
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Shieh et al. (1988) studied this question.
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