1.3-µm InGaAsP/InP buried-hetero structure (BH) and oxide-stripe semiconductor lasers were investigated by the measurement of current-injection-induced acoustic (CIA) signals. The results show that gain suppression occurs well below the threshold current and that a large internal optical loss exists and is saturated at about threshold regardless of the laser structure.
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Suemune et al. (1981) studied this question.
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