Power saturation in 2-1 Y-junction diode lasers

An experimental and theoretical study of 2-1 Y-junction semiconductor lasers is presented. In a V-channeled substrate inner stripe laser (VSIS)-type antireflection coated 2-1 Y-junction array lasing at a wavelength of 780 nm, stable in-phase operation is observed up to a CW output power of 100 mW. In uncoated devices, saturation effects occur which limit stable in-phase operation to low-power output. The experimental results are discussed in the framework of a model based on the beam propagation method.>